Micro-Raman Spectroscopy Study of Vertical GaN Schottky Diode

Depth-resolved confocal micro-Raman spectroscopy for characterizing GaN-based light emitting diode structures.

In this work, we demonstrate that depth-resolved confocal micro-Raman spectroscopy can be used to characterize the active layer of GaN-based LEDs. By taking the depth compression effect due to refraction index mismatch into account, the axial profiles of Raman peak intensities from the GaN capping layer toward the sapphire substrate can correctly match the LED structural dimension and allow the...

Laser Micro-Raman Spectroscopy of CVD Nanocrystalline Diamond Thin Film

Laser micro-Raman spectroscopy is an ideal tool for assessment and characterization of various types of carbon-based materials. Due to its special optical properties (CrN) coated stainless steel substrates. NCD films have been investigated by laser micro-Raman spectroscopy. The fingerprint of diamond based materials is in the spectral region of 1000-1600 cm-1 in the first order of Raman scatter...

Hydrogen sensors based on Pt-AlGaN/AlN/GaN schottky diode

Pt/AlGaN/AlN/GaN Schottky diodes have been fabricated and characterized for H2 sensing. Platinum (Pt) with a thickness of 20nm was evaporated on the sample to form the Schottky contact. The ohmic contact, formed by evaporated Ti/Al/Ni/Au metals, was subsequently annealed by a rapid thermal treatment at 860°C for 30 s in N2 ambience. Both the forward and reverse current of the device increased g...

Raman spectroscopy of nanocrystalline and amorphous GaN

Thermal admittance spectroscopy of Mg-doped GaN Schottky diodes

Thermal admittance spectroscopy measurements at temperatures ranging from room temperature to 90 K are performed on Schottky structures based on Mg-doped GaN layers grown by metalorganic vapor phase epitaxy on sapphire. The analysis of the experimental data is made by a detailed theoretical study of the steady-state and small-signal electrical characteristics of the structures. Numerical simula...